收藏本站
SiZ720DT
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamic a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t d(on)
t r
t d(off)
Channel-1
V DD = 10 V, R L = 1 ?
I D ? 10 A, V GEN = 4.5 V, R g = 1 ?
Channel-2
V DD = 10 V, R L = 1 ?
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
15
25
15
17
18
35
25
40
25
30
30
55
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t f
t d(on)
t r
t d(off)
t f
I D ? 10 A, V GEN = 4.5 V, R g = 1 ?
Channel-1
V DD = 10 V, R L = 1 ?
I D ? 10 A, V GEN = 10 V, R g = 1 ?
Channel-2
V DD = 10 V, R L = 1 ?
I D ? 10 A, V GEN = 10 V, R g = 1 ?
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
12
15
10
15
10
9
20
32
10
10
20
25
15
25
20
15
30
50
20
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
16
16
70
70
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 10 A, V GS = 0 V
I S = 10 A, V GS = 0 V
Channel-1
I F = 10 A, dI/dt = 100 A/μs, T J = 25 °C
Channel-2
I F = 10 A, dI/dt = 100 A/μs, T J = 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
0.78
10
22
2.5
11
5.5
11
4.5
11
1.2
1.2
20
40
5
20
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65579
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIZ902DT-T1-GE3 MOSFET N-CH 30V DUAL D-S
SKY12322-86LF-EVB BOARD EVALUATION FOR SKY12322-86
SKY12323-303LF-EVB BOARD EVALUATION FOR SKY1232-303
SKY12324-73LF-EVB BOARD EVALUATION FOR SKY12324-73
SKY12325-350LF-EVB BOARD EVAL FOR SKY12325-350
SKY12328-350LF-EVB BOARD EVAL FOR SKY12328-350
SKY12339-350LF-EVB BOARD EVAL FOR SKY12339-350
SKY13251-349LF IC SWITCH SP3T GAAS 8QFN
相关代理商/技术参数
SIZ728DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25 V (D-S) MOSFETs
SIZ728DT_12 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25 V (D-S) MOSFETs
SIZ728DT-T1-GE3 功能描述:MOSFET 25V 16A / 35A N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIZ730DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFETs
SIZ730DT_12 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFETs
SiZ730DT-T1-GE3 功能描述:MOSFET 30V 16/35A 27/48W 9.3/3.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIZ790DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
SIZ790DT-T1-GE3 功能描述:MOSFET 30V 16A / 35A Dual N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube